? 2007 ixys corporation, all rights reserved g = gate c = collector e = emitter isoplus247 hiperfast tm igbt isoplus247 tm ds99494a(11/07) v ces = 600v i c110 = 60a v ce(sat) 2.7v t fi(typ) = 80ns lightspeed 2 tm series (electrically isolated back surface) IXGR120N60C2 features z dcb isolated mounting tab z meets to-247ad package outline z high current handling capability z latest generation hdmos tm process z square rbsoa z very high frequency z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z easy assembly z high power density z very fast switching speeds for high frequency applications preliminary technical information symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 600 v v ge(th) i c = 500 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces 100 a v ge = 0v t j = 125c 2 ma i ges v ce = 0v, v ge = 20v 200 na v ce(sat) i c = 100a, v ge = 15v, note 1 2.1 2.7 v t j = 125c 1.6 v (isolated tab) c e symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (limited by leads) 75 a i c110 t c = 110c (chip capability) 60 a i cm t c = 25c, 1ms 500 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 200 a (rbsoa) clamped inductive load @ v ce 600v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60hz, rms, t = 1minute 2500 v~ i isol 1ma t = 1 seconds 3000 v~ f c mounting force 20..120/4.5..27 n/lb t l maximum lead temperature for soldering 300 c t sold plastic body for 10 seconds 260 c weight 5 g g
ixys reserves the right to change limits, test conditions, and dimensions. IXGR120N60C2 note: 1. pulse test, t 300 s; duty cycle, d 2%. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ max. g fs i c = 60a, v ce = 10v, note 1 50 78 s c ies 14.6 nf c oes v ce = 25v, v ge = 0v, f = 1mhz 820 pf c res 280 pf q g(on) 370 nc q ge i c = 100a, v ge = 15v, v ce = 0.5 ? v ces 85 nc q gc 155 nc t d(on) 40 ns t ri 60 ns e on 1.7 mj t d(off) 120 180 ns t fi 80 ns e off 1.0 1.8 mj t d(on) 40 ns t ri 60 ns e on 2.1 mj t d(off) 165 ns t fi 92 ns e off 1.24 mj r thjc 0.42 c /w r thjc 0.15 c /w inductive load, t j = 25c i c = 80a, v ge = 15v v ce = 400v, r g = 1 inductive load, t j = 125c i c = 80a, v ge = 15v v ce = 400v, r g = 1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixgr) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2007 ixys corporation, all rights reserved IXGR120N60C2 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 7v 9v 8v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 8v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v ce - volts i c - amperes v ge = 15 v 13 v 11 v 8v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 200a i c = 50a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.0 2.5 3.0 3.5 4.0 4.5 7 8 9 101112131415 v ge - volts v ce - volts i c = 200 a t j = 25oc 100a 50a fig. 6. input admittance 0 20 40 60 80 100 120 140 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGR120N60C2 fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 220 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 125oc r g = 1 dv / dt < 10v / ns fig. 7. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v ge - volts v ce = 300v i c = 100a i g = 10ma fig. 9. capacitance 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - nanofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2007 ixys corporation, all rights reserved IXGR120N60C2 fig. 12. inductive switching energy loss vs. gate resistance 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 12345678910 r g - ohms e off - millijoules 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 120a i c = 80a fig. 17. inductive turn-off switching times vs. junction temperature 25 50 75 100 125 150 175 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 110 120 130 140 150 160 170 180 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 400v i c = 80a i c = 120a fig. 15. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 200 220 240 12345678910 r g - ohms t f - nanoseconds 100 150 200 250 300 350 400 450 500 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 120a i c = 80 a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 40 50 60 70 80 90 100 110 120 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 1 , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 1 , v ge = 15v v ce = 400v i c = 120a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 180 200 220 40 50 60 70 80 90 100 110 120 i c - amperes t f - nanoseconds 100 110 120 130 140 150 160 170 180 190 200 210 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 , v ge = 15v v ce = 400v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGR120N60C2 fig. 19. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 90 100 110 120 40 50 60 70 80 90 100 110 120 i c - amperes t r - nanoseconds 32 34 36 38 40 42 44 46 48 50 52 t d(on) - nanoseconds t r t d(on) - - - - r g = 1 , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 50 60 70 80 90 100 110 120 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 36 38 40 42 44 46 48 50 t d(on) - nanoseconds t r t d(on) - - - - r g = 1 , v ge = 15v v ce = 400v i c = 120a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 40 60 80 100 120 140 160 180 12345678910 r g - ohms t r - nanoseconds 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 120a i c = 80a ixys ref: g_120n60c2(9d)11-06-07
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